产品
W978H6KBV
This is a 256Mb Low Power DDR2 SDRAM organized as 8M words x 4 banks x 16bits
Density | 256Mb | Status | Mass Production |
Vcc | 1.8V/1.2V | Frequency | 400 / 533 MHz |
Package | 134BGA | Tempture Range | -25~85℃ / -40~85℃ , Automotive |
Feature List | Burst Type: Sequential or Interleave Standard Self Refresh Mode PASR、ATCSR、Power Down Mode、DPD Programmable output buffer driver strength Four internal banks for concurrent operation Bidirectional, data strobe (DQS) is transmitted or received with data, to be used in capturing data at the receiver |
华邦flash,2016年开始主营华邦存储芯片,还有更多flash分享《W25Q128JVSIQ》《W25Q256JVEIQ》。